PART |
Description |
Maker |
KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory 512K x 8 bit NAND Flash Memory
|
Samsung semiconductor Samsung Electronic
|
K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC 8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
|
K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory 1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
MT29F128G08CECAB MT29F128G08CFAAA MT29F256G08CMCAB |
NAND Flash Memory
|
Micron
|
MT29F8G08ABCBB |
NAND Flash Memory
|
Micron
|
MT29F16G08CBACA MT29F16G08CBACB |
NAND Flash Memory
|
Micron
|
MT29F128G08CFAAB MT29F64G08CBAAB |
NAND Flash Memory
|
Micron
|
K9NBG08U5M |
NAND Flash Memory
|
Samsung
|
MT29F8G08AAAC4 MT29F8G08AAAC6 MT29F16G08DAAWP |
NAND Flash Memory
|
Micron
|
KM29V64001T |
8M X 8 BIT NAND FLASH MEMORY
|
Samsung semiconductor
|